Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
- Авторы: Kulagina M.1, Kuzmenkov A.2, Nevedomskii V.1, Guseva Y.1, Maleev S.1, Ladenkov I.3, Fefelova E.3, Fefelov A.3, Ustinov V.2,4, Maleev N.1, Belyakov V.3, Vasil’ev A.3, Bobrov M.1, Blokhin S.1
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Учреждения:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- JSC “Salyut”
- Peter the Great Saint-Petersburg Polytechnic University
- Выпуск: Том 51, № 11 (2017)
- Страницы: 1431-1434
- Раздел: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201511
- DOI: https://doi.org/10.1134/S1063782617110185
- ID: 201511
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Аннотация
The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm.
Об авторах
M. Kulagina
Ioffe Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
A. Kuzmenkov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: maleev@beam.ioffe.ru
Россия, ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. Nevedomskii
Ioffe Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
Yu. Guseva
Ioffe Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
S. Maleev
Ioffe Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
I. Ladenkov
JSC “Salyut”
Email: maleev@beam.ioffe.ru
Россия, ul. Larina 7, Nizhny Novgorod, 603950
E. Fefelova
JSC “Salyut”
Email: maleev@beam.ioffe.ru
Россия, ul. Larina 7, Nizhny Novgorod, 603950
A. Fefelov
JSC “Salyut”
Email: maleev@beam.ioffe.ru
Россия, ul. Larina 7, Nizhny Novgorod, 603950
V. Ustinov
Submicron Heterostructures for Microelectronics Research and Engineering Center; Peter the Great Saint-Petersburg Polytechnic University
Email: maleev@beam.ioffe.ru
Россия, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 29, St. Petersburg, 195251
N. Maleev
Ioffe Institute
Автор, ответственный за переписку.
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
V. Belyakov
JSC “Salyut”
Email: maleev@beam.ioffe.ru
Россия, ul. Larina 7, Nizhny Novgorod, 603950
A. Vasil’ev
JSC “Salyut”
Email: maleev@beam.ioffe.ru
Россия, ul. Larina 7, Nizhny Novgorod, 603950
M. Bobrov
Ioffe Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021
S. Blokhin
Ioffe Institute
Email: maleev@beam.ioffe.ru
Россия, St. Petersburg, 194021