Отправить статью по E-mail Inhomogeneous dopant distribution in III–V nanowires
- Авторы: Leshchenko E.1,2, Dubrovskii V.1,2,3
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Учреждения:
- St. Petersburg Academic University
- ITMO University
- Ioffe Institute
- Выпуск: Том 51, № 11 (2017)
- Страницы: 1427-1430
- Раздел: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201498
- DOI: https://doi.org/10.1134/S1063782617110173
- ID: 201498
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Аннотация
We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as observed experimentally in the case of Be doping of GaAs nanowires and in other material systems.
Об авторах
E. Leshchenko
St. Petersburg Academic University; ITMO University
Email: dubrovskii@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197101
V. Dubrovskii
St. Petersburg Academic University; ITMO University; Ioffe Institute
Автор, ответственный за переписку.
Email: dubrovskii@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194021
