Enviar artigo por via de e-mail Inhomogeneous dopant distribution in III–V nanowires
- Autores: Leshchenko E.1,2, Dubrovskii V.1,2,3
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Afiliações:
- St. Petersburg Academic University
- ITMO University
- Ioffe Institute
- Edição: Volume 51, Nº 11 (2017)
- Páginas: 1427-1430
- Seção: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201498
- DOI: https://doi.org/10.1134/S1063782617110173
- ID: 201498
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Resumo
We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as observed experimentally in the case of Be doping of GaAs nanowires and in other material systems.
Sobre autores
E. Leshchenko
St. Petersburg Academic University; ITMO University
Email: dubrovskii@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101
V. Dubrovskii
St. Petersburg Academic University; ITMO University; Ioffe Institute
Autor responsável pela correspondência
Email: dubrovskii@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194021
