Inhomogeneous dopant distribution in III–V nanowires


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We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as observed experimentally in the case of Be doping of GaAs nanowires and in other material systems.

Sobre autores

E. Leshchenko

St. Petersburg Academic University; ITMO University

Email: dubrovskii@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101

V. Dubrovskii

St. Petersburg Academic University; ITMO University; Ioffe Institute

Autor responsável pela correspondência
Email: dubrovskii@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194021

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