Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions

Аннотация

The I–V characteristics of NiO/CdTe heterostructures fabricated by reactive magnetron sputtering are measured at different temperatures. It is established that current transport through the NiO/CdTe heterojunction is mainly controlled via generation–recombination and tunneling under forward bias and via tunneling under reverse bias. The investigated heterostructures generate an open-circuit voltage of V_oc = 0.26 V and a short-circuit current density of I_sc = 58.7 μA/cm² at an illumination intensity of 80 mW/cm².