Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region
- Авторы: Klyui N.1,2, Lozinskii V.1,2, Liptuga A.2, Dikusha V.2, Oksanych A.3, Kogdas’ M.3, Perekhrest A.3, Pritchin S.3
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Учреждения:
- College of Physics
- Lashkaryov Institute of Semiconductor Physics
- Kremenchug National University
- Выпуск: Том 51, № 3 (2017)
- Страницы: 305-309
- Раздел: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/199555
- DOI: https://doi.org/10.1134/S1063782617030113
- ID: 199555
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Аннотация
The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment.
Об авторах
N. Klyui
College of Physics; Lashkaryov Institute of Semiconductor Physics
Email: lvb@isp.kiev.ua
Китай, Changchun, 130012; Kyiv, 03028
V. Lozinskii
College of Physics; Lashkaryov Institute of Semiconductor Physics
Автор, ответственный за переписку.
Email: lvb@isp.kiev.ua
Китай, Changchun, 130012; Kyiv, 03028
A. Liptuga
Lashkaryov Institute of Semiconductor Physics
Email: lvb@isp.kiev.ua
Украина, Kyiv, 03028
V. Dikusha
Lashkaryov Institute of Semiconductor Physics
Email: lvb@isp.kiev.ua
Украина, Kyiv, 03028
A. Oksanych
Kremenchug National University
Email: lvb@isp.kiev.ua
Украина, Kremenchug, 39600
M. Kogdas’
Kremenchug National University
Email: lvb@isp.kiev.ua
Украина, Kremenchug, 39600
A. Perekhrest
Kremenchug National University
Email: lvb@isp.kiev.ua
Украина, Kremenchug, 39600
S. Pritchin
Kremenchug National University
Email: lvb@isp.kiev.ua
Украина, Kremenchug, 39600