Specific features of waveguide recombination in laser structures with asymmetric barrier layers
- Авторы: Polubavkina Y.1, Zubov F.1,2, Moiseev E.1, Kryzhanovskaya N.1,2, Maximov M.1,2, Semenova E.3, Yvind K.3, Asryan L.4, Zhukov A.1,2
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Учреждения:
- St. Petersburg National Research Academic University
- Peter the Great St. Petersburg Polytechnic University
- DTU Fotonik
- Virginia Polytechnic Institute and State University
- Выпуск: Том 51, № 2 (2017)
- Страницы: 254-259
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199507
- DOI: https://doi.org/10.1134/S1063782617020142
- ID: 199507
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Аннотация
The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.
Об авторах
Yu. Polubavkina
St. Petersburg National Research Academic University
Автор, ответственный за переписку.
Email: polubavkina@mail.ru
Россия, St. Petersburg, 194021
F. Zubov
St. Petersburg National Research Academic University; Peter the Great St. Petersburg Polytechnic University
Email: polubavkina@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg, 195251
E. Moiseev
St. Petersburg National Research Academic University
Email: polubavkina@mail.ru
Россия, St. Petersburg, 194021
N. Kryzhanovskaya
St. Petersburg National Research Academic University; Peter the Great St. Petersburg Polytechnic University
Email: polubavkina@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg, 195251
M. Maximov
St. Petersburg National Research Academic University; Peter the Great St. Petersburg Polytechnic University
Email: polubavkina@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg, 195251
E. Semenova
DTU Fotonik
Email: polubavkina@mail.ru
Дания, Kgs. Lyngby, DK-2800
K. Yvind
DTU Fotonik
Email: polubavkina@mail.ru
Дания, Kgs. Lyngby, DK-2800
L. Asryan
Virginia Polytechnic Institute and State University
Email: polubavkina@mail.ru
США, Blacksburg, Virginia, 24061
A. Zhukov
St. Petersburg National Research Academic University; Peter the Great St. Petersburg Polytechnic University
Email: polubavkina@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg, 195251