Specific features of waveguide recombination in laser structures with asymmetric barrier layers
- Authors: Polubavkina Y.S.1, Zubov F.I.1,2, Moiseev E.I.1, Kryzhanovskaya N.V.1,2, Maximov M.V.1,2, Semenova E.S.3, Yvind K.3, Asryan L.V.4, Zhukov A.E.1,2
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Affiliations:
- St. Petersburg National Research Academic University
- Peter the Great St. Petersburg Polytechnic University
- DTU Fotonik
- Virginia Polytechnic Institute and State University
- Issue: Vol 51, No 2 (2017)
- Pages: 254-259
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199507
- DOI: https://doi.org/10.1134/S1063782617020142
- ID: 199507
Cite item
Abstract
The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.
About the authors
Yu. S. Polubavkina
St. Petersburg National Research Academic University
Author for correspondence.
Email: polubavkina@mail.ru
Russian Federation, St. Petersburg, 194021
F. I. Zubov
St. Petersburg National Research Academic University; Peter the Great St. Petersburg Polytechnic University
Email: polubavkina@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
E. I. Moiseev
St. Petersburg National Research Academic University
Email: polubavkina@mail.ru
Russian Federation, St. Petersburg, 194021
N. V. Kryzhanovskaya
St. Petersburg National Research Academic University; Peter the Great St. Petersburg Polytechnic University
Email: polubavkina@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
M. V. Maximov
St. Petersburg National Research Academic University; Peter the Great St. Petersburg Polytechnic University
Email: polubavkina@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
E. S. Semenova
DTU Fotonik
Email: polubavkina@mail.ru
Denmark, Kgs. Lyngby, DK-2800
K. Yvind
DTU Fotonik
Email: polubavkina@mail.ru
Denmark, Kgs. Lyngby, DK-2800
L. V. Asryan
Virginia Polytechnic Institute and State University
Email: polubavkina@mail.ru
United States, Blacksburg, Virginia, 24061
A. E. Zhukov
St. Petersburg National Research Academic University; Peter the Great St. Petersburg Polytechnic University
Email: polubavkina@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251