On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
- Авторы: Veselov D.1, Shashkin I.1, Bakhvalov K.1, Lyutetskiy A.1, Pikhtin N.1, Rastegaeva M.1, Slipchenko S.1, Bechvay E.1, Strelets V.1, Shamakhov V.1, Tarasov I.1
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Учреждения:
- Ioffe Physical–Technical Institute
- Выпуск: Том 50, № 9 (2016)
- Страницы: 1225-1230
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197912
- DOI: https://doi.org/10.1134/S1063782616090244
- ID: 197912
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Аннотация
Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswave output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).
Об авторах
D. Veselov
Ioffe Physical–Technical Institute
Автор, ответственный за переписку.
Email: dmitriy90@list.ru
Россия, St. Petersburg, 194021
I. Shashkin
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Россия, St. Petersburg, 194021
K. Bakhvalov
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Россия, St. Petersburg, 194021
A. Lyutetskiy
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Россия, St. Petersburg, 194021
N. Pikhtin
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Россия, St. Petersburg, 194021
M. Rastegaeva
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Россия, St. Petersburg, 194021
S. Slipchenko
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Россия, St. Petersburg, 194021
E. Bechvay
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Россия, St. Petersburg, 194021
V. Strelets
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Россия, St. Petersburg, 194021
V. Shamakhov
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Россия, St. Petersburg, 194021
I. Tarasov
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Россия, St. Petersburg, 194021