On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena

Аннотация

It is shown that a three-dimensional fractal–percolation system is formed in nanomaterials of light-emitting InGaN/GaN and AlGaN/GaN structures in the presence of conducting extended defects and local inhomogeneities of the composition of the solid solutions; this system determines the electrophysical properties of light-emitting diodes fabricated on the basis of these structures. The geometry and properties of this system depend nonlinearly on the degree of disorder in the nanomaterial of the structures, on the value of the injection current, and on the rate of alloy growth.