On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
- Autores: Petrov V.1, Sidorov V.2, Talnishnikh N.3, Chernyakov A.3, Shabunina E.1, Shmidt N.1, Usikov A.4, Helava H.4, Makarov Y.4,5
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Afiliações:
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Nitride Crystals Inc.
- Nitride Crystals Group
- Edição: Volume 50, Nº 9 (2016)
- Páginas: 1173-1179
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197836
- DOI: https://doi.org/10.1134/S1063782616090207
- ID: 197836
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Resumo
It is shown that a three-dimensional fractal–percolation system is formed in nanomaterials of light-emitting InGaN/GaN and AlGaN/GaN structures in the presence of conducting extended defects and local inhomogeneities of the composition of the solid solutions; this system determines the electrophysical properties of light-emitting diodes fabricated on the basis of these structures. The geometry and properties of this system depend nonlinearly on the degree of disorder in the nanomaterial of the structures, on the value of the injection current, and on the rate of alloy growth.
Sobre autores
V. Petrov
Ioffe Physical–Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Sidorov
Peter the Great St. Petersburg Polytechnic University
Email: Natalia.Shmidt@mail.ioffe.ru
Rússia, St. Petersburg, 195251
N. Talnishnikh
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: Natalia.Shmidt@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Chernyakov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: Natalia.Shmidt@mail.ioffe.ru
Rússia, St. Petersburg, 194021
E. Shabunina
Ioffe Physical–Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Shmidt
Ioffe Physical–Technical Institute
Autor responsável pela correspondência
Email: Natalia.Shmidt@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Usikov
Nitride Crystals Inc.
Email: Natalia.Shmidt@mail.ioffe.ru
Estados Unidos da América, 181 E Industry Ct., NY, 11729
H. Helava
Nitride Crystals Inc.
Email: Natalia.Shmidt@mail.ioffe.ru
Estados Unidos da América, 181 E Industry Ct., NY, 11729
Yu. Makarov
Nitride Crystals Inc.; Nitride Crystals Group
Email: Natalia.Shmidt@mail.ioffe.ru
Estados Unidos da América, 181 E Industry Ct., NY, 11729; St. Petersburg, 194156