Informaçao sobre o Autor
Portsel, L.
| Edição | Seção | Título | Arquivo |
| Volume 51, Nº 1 (2017) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Diffusion of interstitial magnesium in dislocation-free silicon | |
| Volume 51, Nº 8 (2017) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | High-temperature diffusion of magnesium in dislocation-free silicon | |
| Volume 53, Nº 3 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Decomposition of a Solid Solution of Interstitial Magnesium in Silicon | |
| Volume 53, Nº 6 (2019) | Electronic Properties of Semiconductors | DLTS Investigation of the Energy Spectrum of Si:Mg Crystals | |
| Volume 53, Nº 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission |