| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range |
|
| Volume 50, Nº 10 (2016) |
Physics of Semiconductor Devices |
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm |
|
| Volume 51, Nº 9 (2017) |
Electronic Properties of Semiconductors |
Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range |
|
| Volume 52, Nº 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers |
|
| Volume 52, Nº 8 (2018) |
Physics of Semiconductor Devices |
Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength |
|
| Volume 52, Nº 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures |
|
| Volume 53, Nº 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser |
|
| Volume 53, Nº 8 (2019) |
Physics of Semiconductor Devices |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
|
