Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC
- Autores: Egorkin V.1, Zemlyakov V.1, Nezhentsev A.1, Gudkov V.2, Garmash V.1
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Afiliações:
- National Research University of Electronic Technology
- JSC RPC Istok named after Shokin
- Edição: Volume 53, Nº 15 (2019)
- Páginas: 2012-2015
- Seção: Technological Processes and Routes
- URL: https://journals.rcsi.science/1063-7826/article/view/207566
- DOI: https://doi.org/10.1134/S1063782619150053
- ID: 207566
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Resumo
For silicon carbide, the problem of obtaining low-resistance ohmic contacts with improved service characteristics remains topical despite a significant body of experimental data. The influence exerted by the composition of Ni and TiAl metallization, alloying parameters, additional doping of the contact layer of silicon carbide (SiC) with N+ nitrogen ions, and the crystallographic Si- or C-face on the resistance of ohmic contacts to n-6H-SiC is examined. It is found that the greatest influence on how ohmic contacts to n-6H-SiC are formed is exerted by the alloying process resulting in a decrease in the contact resistance by approximately six times. The process of additional doping with N+ also reduces the contact resistance by nearly a factor of four. It is found that low-resistance contacts can be obtained on both faces with approximately the same low resistance. TiAl metallization is optimal for the C-face, and Ni metallization, for the Si-face. This choice of metallization makes it possible to obtain ohmic contacts on both polar faces with approximately the same resistances on the order of 2.5 × 10–4 Ω cm2.
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Sobre autores
V. Egorkin
National Research University of Electronic Technology
Autor responsável pela correspondência
Email: kfn@miee.ru
Rússia, Moscow
V. Zemlyakov
National Research University of Electronic Technology
Email: kfn@miee.ru
Rússia, Moscow
A. Nezhentsev
National Research University of Electronic Technology
Email: kfn@miee.ru
Rússia, Moscow
V. Gudkov
JSC RPC Istok named after Shokin
Email: kfn@miee.ru
Rússia, Fryazino, Moscow oblast
V. Garmash
National Research University of Electronic Technology
Email: kfn@miee.ru
Rússia, Moscow