Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC
- Authors: Egorkin V.I.1, Zemlyakov V.E.1, Nezhentsev A.V.1, Gudkov V.A.2, Garmash V.I.1
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Affiliations:
- National Research University of Electronic Technology
- JSC RPC Istok named after Shokin
- Issue: Vol 53, No 15 (2019)
- Pages: 2012-2015
- Section: Technological Processes and Routes
- URL: https://journals.rcsi.science/1063-7826/article/view/207566
- DOI: https://doi.org/10.1134/S1063782619150053
- ID: 207566
Cite item
Abstract
For silicon carbide, the problem of obtaining low-resistance ohmic contacts with improved service characteristics remains topical despite a significant body of experimental data. The influence exerted by the composition of Ni and TiAl metallization, alloying parameters, additional doping of the contact layer of silicon carbide (SiC) with N+ nitrogen ions, and the crystallographic Si- or C-face on the resistance of ohmic contacts to n-6H-SiC is examined. It is found that the greatest influence on how ohmic contacts to n-6H-SiC are formed is exerted by the alloying process resulting in a decrease in the contact resistance by approximately six times. The process of additional doping with N+ also reduces the contact resistance by nearly a factor of four. It is found that low-resistance contacts can be obtained on both faces with approximately the same low resistance. TiAl metallization is optimal for the C-face, and Ni metallization, for the Si-face. This choice of metallization makes it possible to obtain ohmic contacts on both polar faces with approximately the same resistances on the order of 2.5 × 10–4 Ω cm2.
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About the authors
V. I. Egorkin
National Research University of Electronic Technology
Author for correspondence.
Email: kfn@miee.ru
Russian Federation, Moscow
V. E. Zemlyakov
National Research University of Electronic Technology
Email: kfn@miee.ru
Russian Federation, Moscow
A. V. Nezhentsev
National Research University of Electronic Technology
Email: kfn@miee.ru
Russian Federation, Moscow
V. A. Gudkov
JSC RPC Istok named after Shokin
Email: kfn@miee.ru
Russian Federation, Fryazino, Moscow oblast
V. I. Garmash
National Research University of Electronic Technology
Email: kfn@miee.ru
Russian Federation, Moscow