Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells
- Autores: Mintairov M.1, Evstropov V.1, Mintairov S.1, Shvarts M.1, Kalyuzhnyy N.1
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Afiliações:
- Ioffe Institute
- Edição: Volume 53, Nº 11 (2019)
- Páginas: 1535-1539
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207324
- DOI: https://doi.org/10.1134/S1063782619110149
- ID: 207324
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Resumo
The “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the Voc–Jsc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p+–n+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p–n junctions. In this case, the Voc–Jsc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.
Sobre autores
M. Mintairov
Ioffe Institute
Autor responsável pela correspondência
Email: mamint@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Evstropov
Ioffe Institute
Email: mamint@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Mintairov
Ioffe Institute
Email: mamint@mail.ioffe.ru
Rússia, St. Petersburg, 194021
M. Shvarts
Ioffe Institute
Email: mamint@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Kalyuzhnyy
Ioffe Institute
Email: mamint@mail.ioffe.ru
Rússia, St. Petersburg, 194021