Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells
- Авторлар: Mintairov M.1, Evstropov V.1, Mintairov S.1, Shvarts M.1, Kalyuzhnyy N.1
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Мекемелер:
- Ioffe Institute
- Шығарылым: Том 53, № 11 (2019)
- Беттер: 1535-1539
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207324
- DOI: https://doi.org/10.1134/S1063782619110149
- ID: 207324
Дәйексөз келтіру
Аннотация
The “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the Voc–Jsc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p+–n+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p–n junctions. In this case, the Voc–Jsc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.
Авторлар туралы
M. Mintairov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: mamint@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Evstropov
Ioffe Institute
Email: mamint@mail.ioffe.ru
Ресей, St. Petersburg, 194021
S. Mintairov
Ioffe Institute
Email: mamint@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Shvarts
Ioffe Institute
Email: mamint@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Kalyuzhnyy
Ioffe Institute
Email: mamint@mail.ioffe.ru
Ресей, St. Petersburg, 194021