On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
- Autores: Baidus N.1, Yunin P.2, Shaleev M.2, Reunov D.1, Rykov A.1, Novikov A.2, Nekorkin S.1, Kudryavtsev K.2, Krasilnik Z.2, Dubinov A.2, Aleshkin V.2, Yurasov D.2
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Afiliações:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Edição: Volume 52, Nº 12 (2018)
- Páginas: 1547-1550
- Seção: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204681
- DOI: https://doi.org/10.1134/S1063782618120060
- ID: 204681
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Resumo
Stressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer. To suppress the relaxation of elastic stresses during the growth of InGaAs quantum wells with a high fraction of In, strain-compensating GaAsP layers are applied. The structural and radiative properties of the samples grown on substrates of various types are compared. Stimulated radiation at wavelengths up to 1.24 μm at 300 K is obtained for structures grown on GaAs substrates and at wavelengths up to 1.1 μm at 77 K, for structures grown on Ge/Si substrates.
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Sobre autores
N. Baidus
Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: bnv@nifi.unn.ru
Rússia, Nizhny Novgorod, 603950
P. Yunin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod , 603950
M. Shaleev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod , 603950
D. Reunov
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
A. Rykov
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
A. Novikov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod , 603950
S. Nekorkin
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
K. Kudryavtsev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod , 603950
Z. Krasilnik
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod , 603950
A. Dubinov
Institute for Physics of Microstructures, Russian Academy of Sciences
Autor responsável pela correspondência
Email: sanya@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod , 603950
V. Aleshkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Autor responsável pela correspondência
Email: aleshkin@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod , 603950
D. Yurasov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod , 603950