On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
- Авторлар: Baidus N.1, Yunin P.2, Shaleev M.2, Reunov D.1, Rykov A.1, Novikov A.2, Nekorkin S.1, Kudryavtsev K.2, Krasilnik Z.2, Dubinov A.2, Aleshkin V.2, Yurasov D.2
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Мекемелер:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Шығарылым: Том 52, № 12 (2018)
- Беттер: 1547-1550
- Бөлім: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204681
- DOI: https://doi.org/10.1134/S1063782618120060
- ID: 204681
Дәйексөз келтіру
Аннотация
Stressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer. To suppress the relaxation of elastic stresses during the growth of InGaAs quantum wells with a high fraction of In, strain-compensating GaAsP layers are applied. The structural and radiative properties of the samples grown on substrates of various types are compared. Stimulated radiation at wavelengths up to 1.24 μm at 300 K is obtained for structures grown on GaAs substrates and at wavelengths up to 1.1 μm at 77 K, for structures grown on Ge/Si substrates.
Негізгі сөздер
Авторлар туралы
N. Baidus
Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: bnv@nifi.unn.ru
Ресей, Nizhny Novgorod, 603950
P. Yunin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod , 603950
M. Shaleev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod , 603950
D. Reunov
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
A. Rykov
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
A. Novikov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod , 603950
S. Nekorkin
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
K. Kudryavtsev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod , 603950
Z. Krasilnik
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod , 603950
A. Dubinov
Institute for Physics of Microstructures, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod , 603950
V. Aleshkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: aleshkin@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod , 603950
D. Yurasov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod , 603950