Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire
- Autores: Yunin P.1,2, Drozdov Y.1, Khrykin O.1, Grigoryev V.2
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Afiliações:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Lobachevsky State University of Nizhny Novgorod
- Edição: Volume 52, Nº 11 (2018)
- Páginas: 1412-1415
- Seção: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204305
- DOI: https://doi.org/10.1134/S106378261811026X
- ID: 204305
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Resumo
The structural properties of GaN(0001) heteroepitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) on a-plane (11\(\bar {2}\)0) sapphire substrates are investigated by X-ray diffractometry. Anisotropy of the rocking-curve width for the symmetric (0004) and asymmetric {11\(\bar {2}\)4} and {10\(\bar {1}\)5} reflections of gallium nitride upon rotation of the sample is observed. A comparison of the anisotropy of the rocking-curve width for GaN(0001)/Al2O3(11\(\bar {2}\)0) layers with two different variants of in-plane orientation relationships suggests that the anisotropy of the structural properties is independent of the thermoelastic stress arising upon cooling the heterostructure.
Sobre autores
P. Yunin
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: yunin@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
Yu. Drozdov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: yunin@ipmras.ru
Rússia, Nizhny Novgorod, 603950
O. Khrykin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: yunin@ipmras.ru
Rússia, Nizhny Novgorod, 603950
V. Grigoryev
Lobachevsky State University of Nizhny Novgorod
Email: yunin@ipmras.ru
Rússia, Nizhny Novgorod, 603950