Spinodal Decomposition in InSb/AlAs Heterostructures
- Autores: Abramkin D.1,2, Bakarov A.1, Gutakovskii A.1,2, Shamirzaev T.1,2,3
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Afiliações:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Ural Federal University
- Edição: Volume 52, Nº 11 (2018)
- Páginas: 1392-1397
- Seção: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204265
- DOI: https://doi.org/10.1134/S1063782618110027
- ID: 204265
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Resumo
The atomic structure and energy spectrum of heterostructures formed in a system of InAs/AlAs binary compounds are studied. The InxAl1 –xSbyAs1 –y alloy, from which quantum wells are formed in InSb/AlAs structures, decomposes into two phases with different compositions. The characteristic dimensions of regions containing separate phases of the alloy in the structure plane are 5–7 nm. Spinodal decomposition of the alloy brings about the formation of coexisting indirect-gap regions with type-I and type-II energy spectra in quantum wells of the heterostructures.
Sobre autores
D. Abramkin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Autor responsável pela correspondência
Email: demid@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
A. Bakarov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: demid@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Gutakovskii
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: demid@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
T. Shamirzaev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University; Ural Federal University
Email: demid@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090; Yekaterinburg, 620002