Spinodal Decomposition in InSb/AlAs Heterostructures
- Авторлар: Abramkin D.1,2, Bakarov A.1, Gutakovskii A.1,2, Shamirzaev T.1,2,3
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Мекемелер:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Ural Federal University
- Шығарылым: Том 52, № 11 (2018)
- Беттер: 1392-1397
- Бөлім: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204265
- DOI: https://doi.org/10.1134/S1063782618110027
- ID: 204265
Дәйексөз келтіру
Аннотация
The atomic structure and energy spectrum of heterostructures formed in a system of InAs/AlAs binary compounds are studied. The InxAl1 –xSbyAs1 –y alloy, from which quantum wells are formed in InSb/AlAs structures, decomposes into two phases with different compositions. The characteristic dimensions of regions containing separate phases of the alloy in the structure plane are 5–7 nm. Spinodal decomposition of the alloy brings about the formation of coexisting indirect-gap regions with type-I and type-II energy spectra in quantum wells of the heterostructures.
Авторлар туралы
D. Abramkin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Хат алмасуға жауапты Автор.
Email: demid@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
A. Bakarov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: demid@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Gutakovskii
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: demid@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
T. Shamirzaev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University; Ural Federal University
Email: demid@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090; Yekaterinburg, 620002