Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering

Resumo

The emission spectra of structures based on ZnO films deposited by high-frequency magnetron sputtering are studied. Clearly pronounced emission lines associated with the recombination of free (λ = 363 nm) and bound excitons (λ = 377, 390, 410 nm) are observed in the PL (photoluminescence) spectra (T = 300 K) of n-ZnO/p-GaN:Mg structures, and no substantial emission is observed in the impurity PL region λ = 450–600 nm. Only emission lines characteristic of n-ZnO (λ = 374 nm) are observed in the EL (electroluminescence) spectra of n-ZnO/p-ZnO structures (T = 300 K).