Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering
- Авторлар: Mezdrogina M.1, Vinogradov A.1, Kozhanova Y.2
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Мекемелер:
- Ioffe Institute
- Peter the Great St. Petersburg Polytechnic University
- Шығарылым: Том 52, № 10 (2018)
- Беттер: 1233-1237
- Бөлім: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/204108
- DOI: https://doi.org/10.1134/S1063782618100123
- ID: 204108
Дәйексөз келтіру
Аннотация
The emission spectra of structures based on ZnO films deposited by high-frequency magnetron sputtering are studied. Clearly pronounced emission lines associated with the recombination of free (λ = 363 nm) and bound excitons (λ = 377, 390, 410 nm) are observed in the PL (photoluminescence) spectra (T = 300 K) of n-ZnO/p-GaN:Mg structures, and no substantial emission is observed in the impurity PL region λ = 450–600 nm. Only emission lines characteristic of n-ZnO (λ = 374 nm) are observed in the EL (electroluminescence) spectra of n-ZnO/p-ZnO structures (T = 300 K).
Авторлар туралы
M. Mezdrogina
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: Margaret.m@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Vinogradov
Ioffe Institute
Email: Margaret.m@mail.ioffe.ru
Ресей, St. Petersburg, 194021
Yu. Kozhanova
Peter the Great St. Petersburg Polytechnic University
Email: Margaret.m@mail.ioffe.ru
Ресей, St. Petersburg, 195251