Features of the selective manganese doping of GaAs structures
- Autores: Kalentyeva I.1, Vikhrova O.1, Danilov Y.1, Zvonkov B.1, Kudrin A.1, Dorokhin M.1, Pavlov D.1, Antonov I.1, Drozdov M.2, Usov Y.1
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Afiliações:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures
- Edição: Volume 51, Nº 11 (2017)
- Páginas: 1415-1419
- Seção: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201483
- DOI: https://doi.org/10.1134/S1063782617110148
- ID: 201483
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Resumo
The effect of technological parameters on the selective manganese doping of arsenide–gallium heterostructures fabricated by a combination of methods of MOS-hydride epitaxy and pulsed-laser deposition is investigated. As these parameters, the impurity content in the manganese δ layer and the structureformation temperature are used. It is established that the prepared structures demonstrate the highest electrical activity and have ferromagnetic properties at a growth temperature of ~400°C and an impurity content of no higher than 0.2–0.3 monolayers. Studying the grown structures by the methods of reflection spectroscopy, high-resolution transmission electron microscopy, and secondary-ion mass spectrometry shows that use of the above conditions in the case of pulsed laser deposition makes it possible to obtain arsenide–gallium structures, which have good crystalline quality, and manganese is concentrated in them within a thin (7–8 nm) layer without substantial diffusion-induced spreading and segregation.
Sobre autores
I. Kalentyeva
Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: istery@rambler.ru
Rússia, Nizhny Novgorod, 603950
O. Vikhrova
Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Rússia, Nizhny Novgorod, 603950
Yu. Danilov
Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Rússia, Nizhny Novgorod, 603950
B. Zvonkov
Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Rússia, Nizhny Novgorod, 603950
A. Kudrin
Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Rússia, Nizhny Novgorod, 603950
M. Dorokhin
Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Rússia, Nizhny Novgorod, 603950
D. Pavlov
Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Rússia, Nizhny Novgorod, 603950
I. Antonov
Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Rússia, Nizhny Novgorod, 603950
M. Drozdov
Institute for Physics of Microstructures
Email: istery@rambler.ru
Rússia, Nizhny Novgorod, 603950
Yu. Usov
Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Rússia, Nizhny Novgorod, 603950