Optical thyristor based on GaAs/InGaP materials
- Autores: Zvonkov B.1, Baidus N.1, Nekorkin S.1, Vikhrova O.1, Zdoroveyshev A.1, Kudrin A.1, Kotomina V.1
-
Afiliações:
- Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
- Edição: Volume 51, Nº 11 (2017)
- Páginas: 1391-1394
- Seção: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201450
- DOI: https://doi.org/10.1134/S1063782617110306
- ID: 201450
Citar
Resumo
The possibility of creating thyristor structures with external optical control by laser radiation with a wavelength of ~800 nm, based on single-crystal wafers of semi-insulating GaAs and layers of InGaP with the lattice parameter compatible with GaAs, is shown.
Sobre autores
B. Zvonkov
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Email: vikhrova@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950
N. Baidus
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Email: vikhrova@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950
S. Nekorkin
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Email: vikhrova@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950
O. Vikhrova
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: vikhrova@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950
A. Zdoroveyshev
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Email: vikhrova@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950
A. Kudrin
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Email: vikhrova@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950
V. Kotomina
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Email: vikhrova@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950