AlN/GaN heterostructures for normally-off transistors
- Autores: Zhuravlev K.1,2, Malin T.1, Mansurov V.1, Tereshenko O.1,2, Abgaryan K.3, Reviznikov D.3, Zemlyakov V.4, Egorkin V.4, Parnes Y.5, Tikhomirov V.5, Prosvirin I.6
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Dorodnicyn Computing Centre of the Russian Academy of Sciences
- National Research University of Electronic Technology (MIET)
- Joint Stock Company “Svetlana-Electronpribor”
- Boreskov Institute of Catalysis, Siberian Branch
- Edição: Volume 51, Nº 3 (2017)
- Páginas: 379-386
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199646
- DOI: https://doi.org/10.1134/S1063782617030277
- ID: 199646
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Resumo
The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.
Sobre autores
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Autor responsável pela correspondência
Email: zhur@isp.nsc.ru
Rússia, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
T. Malin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zhur@isp.nsc.ru
Rússia, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
V. Mansurov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zhur@isp.nsc.ru
Rússia, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
O. Tereshenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: zhur@isp.nsc.ru
Rússia, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
K. Abgaryan
Dorodnicyn Computing Centre of the Russian Academy of Sciences
Email: zhur@isp.nsc.ru
Rússia, ul. Vavilova 40, Moscow, 119333
D. Reviznikov
Dorodnicyn Computing Centre of the Russian Academy of Sciences
Email: zhur@isp.nsc.ru
Rússia, ul. Vavilova 40, Moscow, 119333
V. Zemlyakov
National Research University of Electronic Technology (MIET)
Email: zhur@isp.nsc.ru
Rússia, 4806 proezd 5, Zelenograd, Moscow, 124498
V. Egorkin
National Research University of Electronic Technology (MIET)
Email: zhur@isp.nsc.ru
Rússia, 4806 proezd 5, Zelenograd, Moscow, 124498
Ya. Parnes
Joint Stock Company “Svetlana-Electronpribor”
Email: zhur@isp.nsc.ru
Rússia, pr. Engelsa 27, korp. 164, St. Petersburg, 194156
V. Tikhomirov
Joint Stock Company “Svetlana-Electronpribor”
Email: zhur@isp.nsc.ru
Rússia, pr. Engelsa 27, korp. 164, St. Petersburg, 194156
I. Prosvirin
Boreskov Institute of Catalysis, Siberian Branch
Email: zhur@isp.nsc.ru
Rússia, pr. Akad. Lavrent’eva 5, Novosibirsk, 630090