Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Resumo

The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 10¹⁷ to ~10²⁰ at cm^–3 and of δ doping to the surface concentration (0.3–5) × 10¹³ at cm^–3 are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.