Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
- Authors: Surovegina E.A.1, Demidov E.V.1, Drozdov M.N.1, Murel A.V.1, Khrykin O.I.1, Shashkin V.I.1, Lobaev M.A.2, Gorbachev A.M.2, Viharev A.L.2, Bogdanov S.A.2, Isaev V.A.2, Muchnikov A.B.2, Chernov V.V.2, Radishchev D.B.2, Batler D.E.2
-
Affiliations:
- Institute for Physics of Microstructures
- Institute of Applied Physics
- Issue: Vol 50, No 12 (2016)
- Pages: 1569-1573
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198767
- DOI: https://doi.org/10.1134/S1063782616120204
- ID: 198767
Cite item
Abstract
The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 1017 to ~1020 at cm–3 and of δ doping to the surface concentration (0.3–5) × 1013 at cm–3 are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.
About the authors
E. A. Surovegina
Institute for Physics of Microstructures
Author for correspondence.
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 607680
E. V. Demidov
Institute for Physics of Microstructures
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 607680
M. N. Drozdov
Institute for Physics of Microstructures
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 607680
A. V. Murel
Institute for Physics of Microstructures
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 607680
O. I. Khrykin
Institute for Physics of Microstructures
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 607680
V. I. Shashkin
Institute for Physics of Microstructures
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 607680
M. A. Lobaev
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. M. Gorbachev
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. L. Viharev
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
S. A. Bogdanov
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
V. A. Isaev
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. B. Muchnikov
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
V. V. Chernov
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
D. B. Radishchev
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
D. E. Batler
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950