Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
- Autores: Sokolova Z.1, Bakhvalov K.1, Lyutetskiy A.1, Pikhtin N.1, Tarasov I.1, Asryan L.2
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Afiliações:
- Ioffe Physical–Technical Institute
- Virginia Polytechnic Institute and State University
- Edição: Volume 50, Nº 5 (2016)
- Páginas: 667-670
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197136
- DOI: https://doi.org/10.1134/S1063782616050225
- ID: 197136
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Resumo
Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al0.1Ga0.9As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structures. It is found that the capture velocity into deep quantum wells is significantly lower than into shallow ones.
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Sobre autores
Z. Sokolova
Ioffe Physical–Technical Institute
Autor responsável pela correspondência
Email: zina.sokolova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
K. Bakhvalov
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Lyutetskiy
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Pikhtin
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
I. Tarasov
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
L. Asryan
Virginia Polytechnic Institute and State University
Email: zina.sokolova@mail.ioffe.ru
Estados Unidos da América, Blacksburg, Virginia, 24061