Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
- Autores: Popov V.1, Ilnitskii M.1, Zhanaev E.1, Myakon’kich A.2, Rudenko K.2, Glukhov A.3
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Physical Technological Institute
- Novosibirsk Semiconductor Device Plant and Design Bureau
- Edição: Volume 50, Nº 5 (2016)
- Páginas: 632-638
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197100
- DOI: https://doi.org/10.1134/S1063782616050195
- ID: 197100
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Resumo
The properties of protective dielectric layers of aluminum oxide Al2O3 applied to prefabricated silicon-nanowire transistor biochips by the plasma enhanced atomic layer deposition (PEALD) method before being housed are studied depending on the deposition and annealing modes. Coating the natural silicon oxide with a nanometer Al2O3 layer insignificantly decreases the femtomole sensitivity of biosensors, but provides their stability in bioliquids. In deionized water, transistors with annealed aluminum oxide are closed due to the trapping of negative charges of <(1–10) × 1011 cm−2 at surface states. The application of a positive potential to the substrate (Vsub > 25 V) makes it possible to eliminate the negative charge and to perform multiple measurements in liquid at least for half a year.
Sobre autores
V. Popov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: popov@isp.nsc.ru
Rússia, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
M. Ilnitskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: popov@isp.nsc.ru
Rússia, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
E. Zhanaev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: popov@isp.nsc.ru
Rússia, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
A. Myakon’kich
Physical Technological Institute
Email: popov@isp.nsc.ru
Rússia, Nakhimovskii pr. 36/1, Moscow, 117218
K. Rudenko
Physical Technological Institute
Email: popov@isp.nsc.ru
Rússia, Nakhimovskii pr. 36/1, Moscow, 117218
A. Glukhov
Novosibirsk Semiconductor Device Plant and Design Bureau
Email: popov@isp.nsc.ru
Rússia, ul. Dachnaya 60, Novosibirsk, 630082