Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
- 作者: Popov V.1, Ilnitskii M.1, Zhanaev E.1, Myakon’kich A.2, Rudenko K.2, Glukhov A.3
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Physical Technological Institute
- Novosibirsk Semiconductor Device Plant and Design Bureau
- 期: 卷 50, 编号 5 (2016)
- 页面: 632-638
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197100
- DOI: https://doi.org/10.1134/S1063782616050195
- ID: 197100
如何引用文章
详细
The properties of protective dielectric layers of aluminum oxide Al2O3 applied to prefabricated silicon-nanowire transistor biochips by the plasma enhanced atomic layer deposition (PEALD) method before being housed are studied depending on the deposition and annealing modes. Coating the natural silicon oxide with a nanometer Al2O3 layer insignificantly decreases the femtomole sensitivity of biosensors, but provides their stability in bioliquids. In deionized water, transistors with annealed aluminum oxide are closed due to the trapping of negative charges of <(1–10) × 1011 cm−2 at surface states. The application of a positive potential to the substrate (Vsub > 25 V) makes it possible to eliminate the negative charge and to perform multiple measurements in liquid at least for half a year.
作者简介
V. Popov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: popov@isp.nsc.ru
俄罗斯联邦, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
M. Ilnitskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: popov@isp.nsc.ru
俄罗斯联邦, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
E. Zhanaev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: popov@isp.nsc.ru
俄罗斯联邦, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
A. Myakon’kich
Physical Technological Institute
Email: popov@isp.nsc.ru
俄罗斯联邦, Nakhimovskii pr. 36/1, Moscow, 117218
K. Rudenko
Physical Technological Institute
Email: popov@isp.nsc.ru
俄罗斯联邦, Nakhimovskii pr. 36/1, Moscow, 117218
A. Glukhov
Novosibirsk Semiconductor Device Plant and Design Bureau
Email: popov@isp.nsc.ru
俄罗斯联邦, ul. Dachnaya 60, Novosibirsk, 630082