Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures
- Autores: Musaev A.1
-
Afiliações:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Edição: Volume 50, Nº 4 (2016)
- Páginas: 462-465
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196976
- DOI: https://doi.org/10.1134/S1063782616040175
- ID: 196976
Citar
Resumo
Experimental results on the effects of changes in the impact-ionization current in silicon diffusion p+–n–n+ and n+–p–p+ structures upon nonuniform heating are presented. It is shown that the revealed effects are associated with the transformation of band energy levels caused by thermoelastic stresses of the structures.
Sobre autores
A. Musaev
Amirkhanov Institute of Physics, Dagestan Scientific Center
Autor responsável pela correspondência
Email: akhmed-musaev@yandex.ru
Rússia, ul. Yaragskogo 94, Makhachkala, 367003