Si:Si LEDs with room-temperature dislocation-related luminescence

N. A. Sobolev; A. E. Kalyadin; M. V. Konovalov; P. N. Aruev; V. V. Zabrodskiy; E. I. Shek; K. F. Shtel’makh; A. N. Mikhaylov; D. I. Tetel’baum

doi:10.1134/S1063782616020238

Si:Si LEDs with room-temperature dislocation-related luminescence

Autores: Sobolev N.¹, Kalyadin A.¹, Konovalov M.¹, Aruev P.¹, Zabrodskiy V.¹, Shek E.¹, Shtel’makh K.¹^,2, Mikhaylov A.³, Tetel’baum D.³
Afiliações:
1. Ioffe Physical–Technical Institute
2. Peter the Great St. Petersburg Polytechnic University
3. Lobachevsky State University of Nizhny Novgorod
Edição: Volume 50, Nº 2 (2016)
Páginas: 240-243
Seção: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/196801
DOI: https://doi.org/10.1134/S1063782616020238
ID: 196801

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Silicon-based light-emitting diodes (LEDs) fabricated by the Si-ion implantation and chemical-vapor deposition methods are studied. Room-temperature dislocation-related electroluminescence (EL) is observed in LEDs based on n-Si. In LEDs based on p-Si, the EL is quenched at temperatures higher than 220 K. The EL-excitation efficiencies are measured for the D1 line at room temperature and the D1 and D4 lines at liquid-nitrogen temperature.