Si:Si LEDs with room-temperature dislocation-related luminescence
- Authors: Sobolev N.A.1, Kalyadin A.E.1, Konovalov M.V.1, Aruev P.N.1, Zabrodskiy V.V.1, Shek E.I.1, Shtel’makh K.F.1,2, Mikhaylov A.N.3, Tetel’baum D.I.3
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Affiliations:
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 50, No 2 (2016)
- Pages: 240-243
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196801
- DOI: https://doi.org/10.1134/S1063782616020238
- ID: 196801
Cite item
Abstract
Silicon-based light-emitting diodes (LEDs) fabricated by the Si-ion implantation and chemical-vapor deposition methods are studied. Room-temperature dislocation-related electroluminescence (EL) is observed in LEDs based on n-Si. In LEDs based on p-Si, the EL is quenched at temperatures higher than 220 K. The EL-excitation efficiencies are measured for the D1 line at room temperature and the D1 and D4 lines at liquid-nitrogen temperature.
About the authors
N. A. Sobolev
Ioffe Physical–Technical Institute
Author for correspondence.
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
A. E. Kalyadin
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
M. V. Konovalov
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
P. N. Aruev
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
V. V. Zabrodskiy
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
E. I. Shek
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
K. F. Shtel’makh
Ioffe Physical–Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
A. N. Mikhaylov
Lobachevsky State University of Nizhny Novgorod
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, Nizhny Novgorod, 603950
D. I. Tetel’baum
Lobachevsky State University of Nizhny Novgorod
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, Nizhny Novgorod, 603950