Автор туралы ақпарат
Mnatsakanov, T.
Шығарылым | Бөлім | Атауы | Файл |
Том 50, № 3 (2016) | Physics of Semiconductor Devices | High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base | |
Том 51, № 2 (2017) | Physics of Semiconductor Devices | Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors | |
Том 51, № 6 (2017) | Physics of Semiconductor Devices | On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects | |
Том 51, № 8 (2017) | Physics of Semiconductor Devices | Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers |