| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates |
|
| Том 50, № 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode |
|
| Том 51, № 3 (2017) |
Spectroscopy, Interaction with Radiation |
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates |
|
| Том 51, № 4 (2017) |
Physics of Semiconductor Devices |
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates |
|
| Том 51, № 6 (2017) |
Electronic Properties of Semiconductors |
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates |
|
| Том 52, № 3 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures |
|
| Том 52, № 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method |
|
| Том 53, № 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates |
|
