| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 51, № 9 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films |
|
| Том 51, № 10 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure |
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| Том 52, № 2 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure |
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| Том 53, № 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining |
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| Том 53, № 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers |
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| Том 53, № 4 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films |
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| Том 53, № 8 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
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