The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope
- Авторлар: Prasolov N.1, Ermakov I.1,2, Gutkin A.2, Solov’ev V.2, Dorogin L.1, Konnikov S.2, Brunkov P.1,2
-
Мекемелер:
- ITMO University
- Ioffe Institute
- Шығарылым: Том 53, № 16 (2019)
- Беттер: 2110-2114
- Бөлім: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207605
- DOI: https://doi.org/10.1134/S1063782619120224
- ID: 207605
Дәйексөз келтіру
Аннотация
It was shown that the nanoindentation treatment of the atomically flat GaAs surface with the tip of atomic-force microscope in contact mode allows to produce small size pits with the depth in the range from a few tenths of nm up to a 1.5 nm. The experimental data can be qualitatively described on the base of kinetic concept of fracture of solid state developed by Zhurkov, which suppose the generation of defects and subsequent destruction of the GaAs surface. The molecular dynamics modelling confirmed thermally activated destruction of a few top atomic layers under indentation. The presented technology could be used to form the shape of solid state surfaces with subnanometer resolution in depth without wet etching processes.
Негізгі сөздер
Авторлар туралы
N. Prasolov
ITMO University
Хат алмасуға жауапты Автор.
Email: ndprasolov@itmo.ru
Ресей, St. Petersburg, 197101
I. Ermakov
ITMO University; Ioffe Institute
Хат алмасуға жауапты Автор.
Email: ivanermakov9459@gmail.com
Ресей, St. Petersburg, 197101; St. Petersburg, 194021
A. Gutkin
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: agut@defect.ioffe.ru
Ресей, St. Petersburg, 194021
V. Solov’ev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: vasol@beam.ioffe.ru
Ресей, St. Petersburg, 194021
L. Dorogin
ITMO University
Хат алмасуға жауапты Автор.
Email: leonid.dorogin@niuitmo.ru
Ресей, St. Petersburg, 197101
S. Konnikov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: konnikov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
P. Brunkov
ITMO University; Ioffe Institute
Хат алмасуға жауапты Автор.
Email: brunkov@mail.ioffe.ru
Ресей, St. Petersburg, 197101; St. Petersburg, 194021