The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope
- Authors: Prasolov N.D.1, Ermakov I.A.1,2, Gutkin A.A.2, Solov’ev V.A.2, Dorogin L.M.1, Konnikov S.G.2, Brunkov P.N.1,2
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Affiliations:
- ITMO University
- Ioffe Institute
- Issue: Vol 53, No 16 (2019)
- Pages: 2110-2114
- Section: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207605
- DOI: https://doi.org/10.1134/S1063782619120224
- ID: 207605
Cite item
Abstract
It was shown that the nanoindentation treatment of the atomically flat GaAs surface with the tip of atomic-force microscope in contact mode allows to produce small size pits with the depth in the range from a few tenths of nm up to a 1.5 nm. The experimental data can be qualitatively described on the base of kinetic concept of fracture of solid state developed by Zhurkov, which suppose the generation of defects and subsequent destruction of the GaAs surface. The molecular dynamics modelling confirmed thermally activated destruction of a few top atomic layers under indentation. The presented technology could be used to form the shape of solid state surfaces with subnanometer resolution in depth without wet etching processes.
Keywords
About the authors
N. D. Prasolov
ITMO University
Author for correspondence.
Email: ndprasolov@itmo.ru
Russian Federation, St. Petersburg, 197101
I. A. Ermakov
ITMO University; Ioffe Institute
Author for correspondence.
Email: ivanermakov9459@gmail.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021
A. A. Gutkin
Ioffe Institute
Author for correspondence.
Email: agut@defect.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. A. Solov’ev
Ioffe Institute
Author for correspondence.
Email: vasol@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
L. M. Dorogin
ITMO University
Author for correspondence.
Email: leonid.dorogin@niuitmo.ru
Russian Federation, St. Petersburg, 197101
S. G. Konnikov
Ioffe Institute
Author for correspondence.
Email: konnikov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. N. Brunkov
ITMO University; Ioffe Institute
Author for correspondence.
Email: brunkov@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021