Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells
- Authors: Mintairov M.A.1, Evstropov V.V.1, Mintairov S.A.1, Shvarts M.Z.1, Kalyuzhnyy N.A.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 53, No 11 (2019)
- Pages: 1535-1539
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207324
- DOI: https://doi.org/10.1134/S1063782619110149
- ID: 207324
Cite item
Abstract
The “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the Voc–Jsc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p+–n+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p–n junctions. In this case, the Voc–Jsc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.
About the authors
M. A. Mintairov
Ioffe Institute
Author for correspondence.
Email: mamint@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Evstropov
Ioffe Institute
Email: mamint@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. A. Mintairov
Ioffe Institute
Email: mamint@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. Z. Shvarts
Ioffe Institute
Email: mamint@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. A. Kalyuzhnyy
Ioffe Institute
Email: mamint@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021