Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction
- Авторлар: Vostokov N.1, Daniltsev V.1, Kraev S.1, Krukov V.2, Skorokhodov E.1, Strelchenko S.2, Shashkin V.1
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Мекемелер:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- OOO “MeGa Epitech”
- Шығарылым: Том 53, № 10 (2019)
- Беттер: 1279-1281
- Бөлім: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207121
- DOI: https://doi.org/10.1134/S1063782619100245
- ID: 207121
Дәйексөз келтіру
Аннотация
The first results on the development of an original power GaAs-based field-effect transistor with a vertical channel controlled by a p–n junction are presented. The main manufacturing feature is the use of two separate epitaxial growth processes when forming the transistor structure. The transistor part containing the drain, drift, and gate regions is grown by liquid-phase epitaxy. Metalorganic gas-phase epitaxy is used to form the channel and source regions.
Негізгі сөздер
Авторлар туралы
N. Vostokov
Institute for Physics of Microstructures, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: vostokov@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
V. Daniltsev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
S. Kraev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
V. Krukov
OOO “MeGa Epitech”
Email: vostokov@ipm.sci-nnov.ru
Ресей, Kaluga, 248033
E. Skorokhodov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
S. Strelchenko
OOO “MeGa Epitech”
Email: vostokov@ipm.sci-nnov.ru
Ресей, Kaluga, 248033
V. Shashkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950