Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction
- Autores: Vostokov N.1, Daniltsev V.1, Kraev S.1, Krukov V.2, Skorokhodov E.1, Strelchenko S.2, Shashkin V.1
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Afiliações:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- OOO “MeGa Epitech”
- Edição: Volume 53, Nº 10 (2019)
- Páginas: 1279-1281
- Seção: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207121
- DOI: https://doi.org/10.1134/S1063782619100245
- ID: 207121
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Resumo
The first results on the development of an original power GaAs-based field-effect transistor with a vertical channel controlled by a p–n junction are presented. The main manufacturing feature is the use of two separate epitaxial growth processes when forming the transistor structure. The transistor part containing the drain, drift, and gate regions is grown by liquid-phase epitaxy. Metalorganic gas-phase epitaxy is used to form the channel and source regions.
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Sobre autores
N. Vostokov
Institute for Physics of Microstructures, Russian Academy of Sciences
Autor responsável pela correspondência
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
V. Daniltsev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
S. Kraev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
V. Krukov
OOO “MeGa Epitech”
Email: vostokov@ipm.sci-nnov.ru
Rússia, Kaluga, 248033
E. Skorokhodov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
S. Strelchenko
OOO “MeGa Epitech”
Email: vostokov@ipm.sci-nnov.ru
Rússia, Kaluga, 248033
V. Shashkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950