Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment
- Авторлар: Sladkopevtsev B.1, Kotov G.2, Arsentyev I.3, Shashkin I.2, Mittova I.1, Tomina E.1, Samsonov A.1, Kostenko P.1
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Мекемелер:
- Voronezh State University
- Voronezh State University of Engineering Technologies
- Ioffe Institute
- Шығарылым: Том 53, № 8 (2019)
- Беттер: 1054-1059
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/206617
- DOI: https://doi.org/10.1134/S1063782619080177
- ID: 206617
Дәйексөз келтіру
Аннотация
Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V2O5 and MnO2 nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage (I–V) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V2O5 facilitates the more intense (in comparison with MnO2) chemical bonding of arsenic at the internal interface with the formation of As2O5. As a result, thermally oxidized V2O5/GaAs heterostructures exhibit higher breakdown voltages.
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Авторлар туралы
B. Sladkopevtsev
Voronezh State University
Хат алмасуға жауапты Автор.
Email: sladkopevtsev@chem.vsu.ru
Ресей, Voronezh, 394018
G. Kotov
Voronezh State University of Engineering Technologies
Email: shaskin@mail.ioffe.ru
Ресей, Voronezh, 394036
I. Arsentyev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: arsentyev@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Shashkin
Voronezh State University of Engineering Technologies
Хат алмасуға жауапты Автор.
Email: shaskin@mail.ioffe.ru
Ресей, Voronezh, 394036
I. Mittova
Voronezh State University
Email: shaskin@mail.ioffe.ru
Ресей, Voronezh, 394018
E. Tomina
Voronezh State University
Email: shaskin@mail.ioffe.ru
Ресей, Voronezh, 394018
A. Samsonov
Voronezh State University
Email: shaskin@mail.ioffe.ru
Ресей, Voronezh, 394018
P. Kostenko
Voronezh State University
Email: shaskin@mail.ioffe.ru
Ресей, Voronezh, 394018