Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment
- Autores: Sladkopevtsev B.1, Kotov G.2, Arsentyev I.3, Shashkin I.2, Mittova I.1, Tomina E.1, Samsonov A.1, Kostenko P.1
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Afiliações:
- Voronezh State University
- Voronezh State University of Engineering Technologies
- Ioffe Institute
- Edição: Volume 53, Nº 8 (2019)
- Páginas: 1054-1059
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/206617
- DOI: https://doi.org/10.1134/S1063782619080177
- ID: 206617
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Resumo
Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V2O5 and MnO2 nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage (I–V) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V2O5 facilitates the more intense (in comparison with MnO2) chemical bonding of arsenic at the internal interface with the formation of As2O5. As a result, thermally oxidized V2O5/GaAs heterostructures exhibit higher breakdown voltages.
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Sobre autores
B. Sladkopevtsev
Voronezh State University
Autor responsável pela correspondência
Email: sladkopevtsev@chem.vsu.ru
Rússia, Voronezh, 394018
G. Kotov
Voronezh State University of Engineering Technologies
Email: shaskin@mail.ioffe.ru
Rússia, Voronezh, 394036
I. Arsentyev
Ioffe Institute
Autor responsável pela correspondência
Email: arsentyev@mail.ioffe.ru
Rússia, St. Petersburg, 194021
I. Shashkin
Voronezh State University of Engineering Technologies
Autor responsável pela correspondência
Email: shaskin@mail.ioffe.ru
Rússia, Voronezh, 394036
I. Mittova
Voronezh State University
Email: shaskin@mail.ioffe.ru
Rússia, Voronezh, 394018
E. Tomina
Voronezh State University
Email: shaskin@mail.ioffe.ru
Rússia, Voronezh, 394018
A. Samsonov
Voronezh State University
Email: shaskin@mail.ioffe.ru
Rússia, Voronezh, 394018
P. Kostenko
Voronezh State University
Email: shaskin@mail.ioffe.ru
Rússia, Voronezh, 394018