Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment

Abstract

Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V₂O₅ and MnO₂ nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage (I–V) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V₂O₅ facilitates the more intense (in comparison with MnO₂) chemical bonding of arsenic at the internal interface with the formation of As₂O₅. As a result, thermally oxidized V₂O₅/GaAs heterostructures exhibit higher breakdown voltages.