Мақаланы E-mail арқылы жіберу Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells
- Авторлар: Dubinov A.1,2, Aleshkin V.1,2, Morozov S.1,2
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Мекемелер:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Lobachevsky State University of Nizhny Novgorod
- Шығарылым: Том 52, № 9 (2018)
- Беттер: 1221-1224
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204092
- DOI: https://doi.org/10.1134/S1063782618090038
- ID: 204092
Дәйексөз келтіру
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Тек жазылушылар үшін
Аннотация
The possibility of significant lowering of the interband lasing threshold in laser structures of the mid-infrared region based on HgCdTe with HgTe quantum wells by doping with donors, which introduce δ layers near quantum wells, is proposed and analyzed. It is shown that at an optimum surface donor concentration in the δ layer of 4 × 1010 cm–2 and an operating temperature of >40 K, the lasing threshold at a wavelength of 20 μm can be lowered more than twofold.
Негізгі сөздер
Авторлар туралы
A. Dubinov
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Aleshkin
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. Morozov
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
