On Recombination Processes in CdS–PbS Films
- Авторлар: Rokakh A.1, Shishkin M.1, Atkin V.1
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Мекемелер:
- Saratov State University
- Шығарылым: Том 52, № 8 (2018)
- Беттер: 986-992
- Бөлім: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/203808
- DOI: https://doi.org/10.1134/S1063782618080171
- ID: 203808
Дәйексөз келтіру
Аннотация
The transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)0.9–(PbS)0.1 films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.
Авторлар туралы
A. Rokakh
Saratov State University
Email: shishkin1mikhail@gmail.com
Ресей, Saratov, 410012
M. Shishkin
Saratov State University
Хат алмасуға жауапты Автор.
Email: shishkin1mikhail@gmail.com
Ресей, Saratov, 410012
V. Atkin
Saratov State University
Email: shishkin1mikhail@gmail.com
Ресей, Saratov, 410012