On Recombination Processes in CdS–PbS Films
- Autores: Rokakh A.1, Shishkin M.1, Atkin V.1
-
Afiliações:
- Saratov State University
- Edição: Volume 52, Nº 8 (2018)
- Páginas: 986-992
- Seção: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/203808
- DOI: https://doi.org/10.1134/S1063782618080171
- ID: 203808
Citar
Resumo
The transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)0.9–(PbS)0.1 films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.
Sobre autores
A. Rokakh
Saratov State University
Email: shishkin1mikhail@gmail.com
Rússia, Saratov, 410012
M. Shishkin
Saratov State University
Autor responsável pela correspondência
Email: shishkin1mikhail@gmail.com
Rússia, Saratov, 410012
V. Atkin
Saratov State University
Email: shishkin1mikhail@gmail.com
Rússia, Saratov, 410012