On Recombination Processes in CdS–PbS Films


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Resumo

The transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)0.9–(PbS)0.1 films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.

Sobre autores

A. Rokakh

Saratov State University

Email: shishkin1mikhail@gmail.com
Rússia, Saratov, 410012

M. Shishkin

Saratov State University

Autor responsável pela correspondência
Email: shishkin1mikhail@gmail.com
Rússia, Saratov, 410012

V. Atkin

Saratov State University

Email: shishkin1mikhail@gmail.com
Rússia, Saratov, 410012


Declaração de direitos autorais © Pleiades Publishing, Ltd., 2018

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