Мақаланы E-mail арқылы жіберу Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching
- Авторлар: Mitrofanov M.1,2, Levitskii I.1,2, Voznyuk G.3, Tatarinov E.3, Rodin S.1,2, Kaliteevski M.1,3,4, Evtikhiev V.4
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Мекемелер:
- Ioffe Institute
- SHM R&E Center
- ITMO University
- St. Petersburg National Research Academic University
- Шығарылым: Том 52, № 7 (2018)
- Беттер: 954-956
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/203761
- DOI: https://doi.org/10.1134/S1063782618070151
- ID: 203761
Дәйексөз келтіру
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Аннотация
In the Si3N4 layer, coaxial and single submicrometer GaN structures of hexagonal shape with pyramidal facets are formed by selective vapor-phase epitaxy in windows produced with a focused ion beam. It is found that coaxial hexagonal structures are formed during the growth process in ring-shaped mask windows.
Авторлар туралы
M. Mitrofanov
Ioffe Institute; SHM R&E Center
Email: Kalit@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
I. Levitskii
Ioffe Institute; SHM R&E Center
Email: Kalit@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
G. Voznyuk
ITMO University
Email: Kalit@mail.ioffe.ru
Ресей, St. Petersburg, 197101
E. Tatarinov
ITMO University
Email: Kalit@mail.ioffe.ru
Ресей, St. Petersburg, 197101
S. Rodin
Ioffe Institute; SHM R&E Center
Email: Kalit@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
M. Kaliteevski
Ioffe Institute; ITMO University; St. Petersburg National Research Academic University
Хат алмасуға жауапты Автор.
Email: Kalit@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194021
V. Evtikhiev
St. Petersburg National Research Academic University
Email: Kalit@mail.ioffe.ru
Ресей, St. Petersburg, 194021
