Electrical Activity of Extended Defects in Multicrystalline Silicon
- Авторлар: Pescherova S.1, Yakimov E.2, Nepomnyashchikh A.1, Pavlova L.1, Feklisova O.2, Presnyakov R.1
-
Мекемелер:
- Vinogradov Institute of Geochemistry, Siberian Branch
- Institute of Microelectronics Technology and High Purity Materials
- Шығарылым: Том 52, № 2 (2018)
- Беттер: 254-259
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/202483
- DOI: https://doi.org/10.1134/S1063782618020124
- ID: 202483
Дәйексөз келтіру
Аннотация
The excess carrier lifetime (τ) distribution in multicrystalline silicon grown by the Bridgman technique from high-purity metallurgical silicon (HPMG-Si) is studied. The features of the variation in τ, caused by the grain-boundary structure of ingots, are revealed. The grain boundaries, dislocations, and impurity microinclusions are studied by electron probe microanalysis (EPMA) and scanning electron microscopy (SEM) using selective acid etching. The electrical activity of extended defects is measured by the electronbeam- induced-current (EBIC) method.
Авторлар туралы
S. Pescherova
Vinogradov Institute of Geochemistry, Siberian Branch
Хат алмасуға жауапты Автор.
Email: spescherova@mail.ru
Ресей, Irkutsk, 664033
E. Yakimov
Institute of Microelectronics Technology and High Purity Materials
Email: spescherova@mail.ru
Ресей, Chernogolovka, 142432
A. Nepomnyashchikh
Vinogradov Institute of Geochemistry, Siberian Branch
Email: spescherova@mail.ru
Ресей, Irkutsk, 664033
L. Pavlova
Vinogradov Institute of Geochemistry, Siberian Branch
Email: spescherova@mail.ru
Ресей, Irkutsk, 664033
O. Feklisova
Institute of Microelectronics Technology and High Purity Materials
Email: spescherova@mail.ru
Ресей, Chernogolovka, 142432
R. Presnyakov
Vinogradov Institute of Geochemistry, Siberian Branch
Email: spescherova@mail.ru
Ресей, Irkutsk, 664033